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3 June 2013

MwT launches AlGaAs/InGaAs pHEMT-based ultra-broadband driver MMIC amplifier up to 50GHz

MicroWave Technology Inc (MwT) of Fremont, CA, USA, the RF division of IXYS Corp that makes microwave devices, MMICs, hybrid modules and connecterized amplifiers for wireless communication infrastructure, military/aerospace, industrial and medical applications, has launched an AlGaAs/InGaAs pHEMT-based monolithic microwave integrated circuit (MMIC) ultra-broadband driver amplifier product up to 50GHz. The product is targeted at applications including fiber-optics communications, microwave/mm-wave communications systems, microwave/mm-wave testing equipment, and military applications.

The MMA-005022 is an ultra-broadband travelling-wave amplifier MMIC with medium output power and high gain over a full range of nearly DC 30kHz to 50GHz. It offers a typical +22dBm saturated power and +20dBm output power at a 1dB gain compression point at 30GHz. The MMIC chip typically has 16dB gain across the band with +/-1dB gain flatness. The typical input/out return loss for the chip is 15dB. The DC bias is 200mA drain current with 7V drain voltage.

“The excellent performance of the MMA-005022 ultra-broadband MMIC amplifier up to mm-wave frequency range, together with its high reliability and competitive cost, make this part an excellent choice for wide range applications including modulator driver for fiber-optics communication, wireless communication infrastructure, microwave and mm-wave frequency testing equipment, military/EW, and high-rel/space etc,” reckons MwT’s general manager Dr Greg Zhou.

The MMA-005022 is fully matched for both input and output terminals for easy cascade and is also available in the low-cost R4 (4mm x 4mm) surface-mount package. The mean time before failure (MTBF) is over 100 years at 85°C ambient temperature. An evaluation board for the packaged version of the device is also available.

Tags: MwT MMICs AlGaAs pHEMT


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