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31 January 2013

TriQuint’s launches smaller linear EDGE power amplifier module for mobile devices

RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has launched a quad-band GSM/EDGE power amplifier module with what is claimed to be best-in-class power-added-efficiency (PAE), delivering longer user operating time for mobile devices.

Using TriQuint’s GaAs HBT/CuFlip PA technology, the TQM7M5050 module offers high reliability, temperature stability and ruggedness. With input power controlled GMSK and 8PSK (pre-distortion required in EDGE mode), PA output power is controlled by the input power coming from the transceiver in both GMSK and 8PSK modes. Operation features two modes: high-band mode (HBM) and low-band mode (LBM). The module has a built-in CMOS controller optimized for 50Ω, and what is claimed to be excellent Rx band noise sensitivity.

Included on a leading chipset supplier’s multi-mode reference design for linear EDGE applications, the new TQM7M5050 module suits smartphones, tablets and other mobile devices. The 14-pin 5.0mm x 3.5mm x 0.9mm module is 30% smaller than previous-generation products, saving board space and allowing high levels of integration.

The TQM7M5050 is in production, and samples are available.

Tags: TriQuint linear EDGE


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