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15 January 2013

Microsemi expands SiC power module family to industrial and extended temperature ranges

Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has launched a new generation of industrial-temperature silicon carbide (SiC) standard power modules, suited for use in high-power switch mode power supplies (SMPS), motor drives, uninterruptible power supplies (UPS), solar inverters, oil exploration and other high-power, high-voltage industrial applications requiring high performance and reliability. The power module family is also offered with extended temperature ranges to meet next-generation power conversion system requirements for higher power densities, operating frequencies and efficiencies.

Microsemi says that SiC technology delivers higher breakdown field strength and improved thermal conductivity compared to silicon material. This enables improved performance characteristics in parameters including zero reverse recovery, temperature-independent behavior, higher-voltage capability and higher-temperature operation to achieve new levels of performance, efficiency and reliability.

“We applied our extensive expertise in power semiconductor integration and packaging to deliver a next-generation family of silicon carbide power modules that deliver outstanding levels of performance, reliability and overall quality,” claims Philippe Dupin, general manager of Microsemi's Power Module Products group. “Our new modules also allow designers to shrink system size and weight, while reducing total systems costs.”

The firm’s new industrial-temperature SiC power modules feature multiple circuit topologies and are integrated into low-profile packages. The majority of the new module product family uses aluminium nitride (AIN) substrates to enable isolation from the heat sink, improving heat transfer to the cooling system.

Additional features include high-speed switching, low switching losses, low input capacitance, low drive requirements, low profile and minimum parasitic inductance, enabling high-frequency, high-performance, high-density and energy-saving power systems.

The new industrial-temperature module family includes the following parameters and devices:

  • 1200V boost chopper configuration, rated from 50A to 100A (APT100MC120JCU2 and APT50MC120JCU2);
  • 1200V phase leg configuration, rated from 40A to 200A (APTMC120AM08CD3AG, APTMC120AM20CT1AG and APTMC120AM55CT1AG); 
  • 600V neutral point clamped configuration, dedicated to three level inverters for solar or UPS applications, rated from 20A to 160A (APTMC60TLM14CAG, APTMC60TLM20CT3AG, APTMC60TLM55CT3AG and APTMC60TL11CT3AG); and
  • Neutral point clamped configuration, 600V/1200V mixed voltage, rated from 20A to 50A (APTMC120HRM40CT3G and APTMC120HR11CT3G).

Samples of the industrial-temperature SiC standard power modules are available within short lead times.

Tags: Microsemi SiC power module


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