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10 April 2013

TriQuint launches GaAs RF power amplifiers with high gain and efficiency

At the 14th annual IEEE Wireless and Microwave Technology Conference (WAMICON 2013) in Orlando, FL (7-9 April), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA launched three packaged gallium arsenide (GaAs) RF power amplifiers that deliver high output, gain and efficiency for commercial and defense applications including point-to-point microwave radio, radar, and VSAT.

The TGA2501-GSG is a 3.2W (35dBm), 6-18GHz RF power amplifier with 26dB small-signal gain, 19dB large-signal gain, 23% efficiency, and 8V/1.2A DC bias.

TGA2536-FL is a 5.5W (37.4dBm), 13.5-16GHz RF power amplifier with 25dB small-signal gain, 19dB large-signal gain, 20% efficiency, and 8V/2.6A DC bias.

The TGA2517-GSG is a 14W (41.6dBm), 7.5-11.5GHz RF power amplifier with 30dB small-signal gain, 22dB large-signal gain, 25% efficiency, and 12V/3A DC bias. The device is ITAR controlled (contact TriQuint for license requirements).

All of the new power amplifiers incorporate integrated DC blocking capacitors, and are housed in a 14-pin 11.38mm x 17.32mm flange package.

The new amplifiers feature low-loss, ground-signal-ground (GSG) RF transitions designed to interface with a coplanar waveguide multilayer PC circuit board for superior grounding. The packaging enables the amplifiers to serve on either side of a PCB board, facilitating a greater variety of component layout alternatives.

Samples and evaluation fixtures are available for all three of the new amplifiers.

Tags: TriQuint power amplifier


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