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11 April 2013

Toshiba starts volume production of SiC power devices with 650V Schottky barrier diode

In anticipation of growing demand for industrial and automotive applications, Japan’s Toshiba Corp has started volume production of silicon carbide (SiC) power devices at its Himeji Operations–Semiconductor plant in Hyogo Prefecture.  

As the first of its new line-up of SiC products, Toshiba will manufacture the 650V TRS12E65C Schottky barrier diode (SBD). Operating at a current of 12A and a forward voltage of 1.7V maximum, the SBD is suited to applications including power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are about 50% more efficient.

ToshibaPicture: Toshiba’s TRS12E65C 650V Schottky barrier diode.

SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation, says Toshiba. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters and trains to automotive systems, the firm adds.

Analysts estimate that the SiC power device market will grow to about 10 times the current scale by 2020. Toshiba aims to secure 30% market share in 2020 by strengthening its product line-up, starting with the launch of the new SBD.

Tags: Toshiba


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