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17 April 2013

Cree’s 1200V SiC MOSFETs enable Delta Energy Systems’ next-gen solar inverters

Delta Energy Systems, a subsidiary of Delta Electronics Group (one of the world’s largest providers of power management solutions), has launched a new generation of solar photovoltaic (PV) power inverters that use silicon carbide (SiC) power MOSFETs made by Cree Inc of Durham, NC, USA. 

CreePicture: Cree’s SiC MOSFET and Delta’s PV inverter.

“The next-generation PV inverters from Delta are designed to set a new milestone of power density by utilizing SiC MOSFETs,” says Klaus Gremmelspacher, head of R&D for PV inverters at Delta Energy Systems. “The SiC MOSFETs from Cree were essential for us to realize our goals for new, high-power inverters that are lightweight and have industry-leading efficiency,” he adds.

Cree released the first SiC MOSFETs (used for their ability to cut losses and allow PV inverters to run at higher efficiencies and higher power densities) in 2011, followed by a much improved, second-generation SiC MOSFET in 2013.

Now, using 1200V SiC MOSFETs from Cree in an 11kW PV inverter, Delta has been able to extend the DC input voltage range while maintaining and even increasing the maximum efficiency of its previous products. The Delta 11kW booster, which now has 1kV DC input instead of 900V, is targeted for release before the end of second-quarter 2013.

“Delta Energy Systems is utilizing the 1200V, 160m-Ohm MOSFET, which has matured rapidly since its release in 2011,” says Dr Scott Allen, senior director of marketing, Cree Power. “Advanced technology customers like Delta are now moving aggressively forward with our SiC MOSFET technology, which enables reduced size, weight and cost for PV inverters, from 20% to 50% when compared with silicon, while at the same time maintaining or increasing efficiency,” he adds. 

Packaged SiC MOSFETs from Cree are available from DigiKey and Mouser, and die are available from SemiDice.

Tags: Cree SiC MOSFET



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