8 June 2011

Anadigics ships dual-band PA for Samsung’s first 4G LTE smart-phone

RF and mixed-signal semiconductor maker Anadigics Inc of Warren, NJ, USA says it is shipping production volumes of its AWC6323 dual-band High-Efficiency-at-Low-Power (HELP3E) power amplifiers (PAs) to Korea’s Samsung Electronics for its first 4G LTE smart-phone, the feature-packed Droid Charge (which includes a 4.3-inch AMOLED display, rear-facing 8 megapixel camera, front-facing 1.3 megapixel camera, and Android 2.2 operating system).

“The Samsung Droid Charge raises the bar for 4G Android smartphones, by delivering an exceptional multimedia experience,” says Michael Canonico, Anadigics’ senior VP of worldwide sales. “Anadigics has forged a strong relationship with Samsung Electronics by providing power amplifiers with industry-leading efficiency, linearity, and integration,” he claims. “We look forward to supporting Samsung through each successive generation of mobile connectivity.”

As part of its HELP3E product family, the AWC6323 PAs use Anadigics’ exclusive InGaP-Plus technology to achieve optimal power-added efficiency across low-range and mid-range output power levels (via three different mode states) and to provide low quiescent current of 4mA.

Also, integrating an RF coupler and internal voltage regulation together with independent PCS and cell-band PAs in a single package, the compact 3mm x 5mm footprint reduces printed circuit board (PCB) space by 25% compared with current-generation single-band solutions, it is claimed.

Tags: Anadigics AWC6323 PAs

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