Learn more about R&D chemical mechanical polishing by requesting our FREE informational CD.

Download our CMP White Paper

Class One Equipment


FREE subscription
Subscribe for free to receive each issue of Semiconductor Today magazine and weekly news brief.


6 September 2007


TDI starts production of 100mm GaN and AlN epiwafers

Nitride material manufacturer Technologies and Devices International Inc (TDI) of Silver Spring, MD, USA says that its 4-inch (100mm) GaN and AlN epitaxial wafers are now in production and being shipped to customers. The wafers are manufactured by TDI’s proprietary patented hydride vapor phase epitaxial (HVPE) process and multi-wafer equipment.

The GaN wafers consist of a 7–12 micron thick GaN layer deposited on (0001) c-plane 4-inch sapphire substrates. Target applications are low-defect substrates for blue, green and white GaN-based LEDs. 

The AlN wafers consist of a 10–30 micron thick electrically insulating AlN layer deposited on (0001) 4-inch silicon carbide substrates. Target applications are low-defect electrically insulating substrates for development and production of high-power AlGaN-based high-electron-mobility transistors (HEMTs).

“There is a clear trend in the industry to develop and commercialize GaN-based devices on large substrates,” says president and CEO Vladimir Dmitriev. “TDI’s customers are rapidly moving from the industry-standard 2-inch epitaxial wafers to 3-inch and now to 4-inch wafers. TDI has successfully expanded its manufacturing facility and deposition equipment to start volume production of 4-inch (100mm) GaN and AlN epitaxial products,” he adds. 

In addition, TDI is also on track to begin production of 6-inch epitaxial products in 2008, Dmitriev continues. “Volume production of large-area low-cost GaN and AlN substrates will tremendously benefit our customers in terms of device throughput, material yield, and reduced production cost.”

See related items:

TDI demonstrates first HVPE-grown blue and green InGaN LEDs

TDI introduces InGaN substrates