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17 August 2007


TDI introduces InGaN substrates

Technologies and Devices International Inc (TDI) of Silver Spring, MD, USA has announced the availability of what it says is world’s first InGaN substrate material.

InGaN substrates provide a material match for InGaN-based device epitaxial structures used for the fabrication of GaN-based ultra violet, blue, green, and white LEDs and blue laser diodes. According to TDI, the material match reduces defects in the light emitting regions of these devices, and increases their efficiency and lifetime.

“Since the first demonstration of high-quality InGaN materials grown by hydride vapor phase epitaxy (HVPE) in 2006, we have been receiving continuous requests from our customers regarding these new products. Today we are pleased to announce the expansion of our substrate materials offering to include InGaN substrates,” said Vladimir Dmitriev, president and CEO of TDI. “We view this effort as one of the key components to enable advanced light emitting devices, particularly for solid state lighting applications.”

“No other existing substrates provide such an excellent material match between the substrate and the InGaN-based light emitting epitaxial structure,” added Alexander Syrkin, a senior crystal growth specialist at TDI. “Composition of the InGaN can be carefully controlled to produce substrate materials matching customer device structure requests. Crystal lattice and thermal match between the substrate and the overgrown InGaN device has been predicted for a long time to reduce defects in the light emitting regions, increase light emitting efficiency and device lifetime.”

Fabricated using TDI’s proprietary, patented hydride vapor phase epitaxial (HVPE) process, the substrates consist of an InGaN layer deposited on a 2-inch GaN/sapphire template. InN content in the InGaN layers ranges from 5 to 20 mol. %.

Volume production of the InGaN template substrates is due to begin early in 2008.

TDI will report properties of InGaN substrates at the 4th China International Forum & Exhibition on Solid State Lighting, Shanghai (22-24 August) and at the 1st International Conference on White LEDs and Solid State Lighting, Tokyo (26-30 November). New InGaN products will be displayed at the 7th International Conference on Nitride Semiconductors, Las Vegas (16-21 September).

*TDI celebrates 10th anniversary

Founded in Gaithersburg, MD, USA in August 1997, TDI celebrates its 10th anniversary this month. In 2002, the company moved to Silver Spring, MD, USA, where it now manufacturers a variety of compound semiconductor products, including 2-inch, 3-inch, and 4-inch (100 mm) GaN-on-sapphire, AlN-on-sapphire, AlGaN-on-sapphire, InN/GaN-on-sapphire, and AlN-on-SiC epitaxial wafers. All of TDI’s products are fabricated using its HVPE technology and equipment.

"Over the past ten years, TDI has developed a significant range of products to address the nitride semiconductor needs for optoelectronic and electronic industries. During our fiscal year ended on June 30, 2007, the Company shipped its products to nearly 100 different commercial and academic customers all over the world. One of the keys to TDI's success has been the development of high-throughput multi-wafer HVPE equipment. This equipment and related processing expertise has allowed TDI to provide our customers with cost-effective high-quality products," said Dmitriev.

See related items:

UCSB achieves high-efficiency non-polar GaN LEDs at improved output power

Panasonic launching first white LED using GaN substrate

Cermet licenses phosphor-free GaN-on-ZnO white LED technology from Georgia Tech

TDI to sample InGaN epi in early 2007, for small-scale production in Q3