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16 August 2007


Nitronex’s 100W GaN-on-Si HEMT now production qualified

Nitronex of Durham, NC, USA says that, after rigorous testing, its 28V, 100W-class NPT25100 gallium nitride on silicon (GaN-on-Si) HEMT RF power transistors are now qualified for volume production.

Designed using Nitronex’s patented SIGANTIC NRF1 process, the NPT25100 is optimized for continuous wave (CW), pulsed, WiMAX, W-CDMA and long-term evolution (LTE) applications operating between 2.1-2.7GHz.

The NPT25100 was launched at the IEEE MTT-S event in Hawaii in early June, targeting 2.3-2.7GHz WiMAX applications . “We have extended the operating frequency and increased the power output of the NPT25100 devices, while reducing the cost per watt for peak power to the lowest in the GaN industry,” says director of marketing Ray Crampton.

Typical performance is rated using a mobile WiMAX waveform, defined as a single-carrier orthogonal frequency-division multiplexing ( OFDM) signal 64-QAM 3/4, 8-burst, 3.5MHz channel bandwidth, and 10.3dB PAR (peak-to-average ratio) @ 0.01% probability on CCDF (complementary cumulative distribution function). Under these conditions, the NPT25100 will deliver 16.5dB power gain (up from the 14.5dB announced in June) with a drain efficiency of 26% (increased from 21%) and an error vector magnitude (EVM) of 2.0% (reduced from 2.5%) - all at 10W of power. Typical two-tone peak envelope power (PEP) is 125W and drain efficiency is more than 65%.

The NPT25100 is packaged in a thermally enhanced copper moly copper package in a bolt-down version, with a pill version scheduled to be available in fourth-quarter 2007. Typical pricing is $90 each in quantities of 1000 (less than 72 cents per watt for peak power).

See related items:

Cree samples new GaN HEMTs for WiMAX and launches AWR PDK for high-power GaN MMIC process

Nitronex launches 100W GaN-on-Si HEMT power transistor for WiMAX

KDDI and Fujitsu develop practical GaN HEMT-based high-efficiency amplifier for mobile WiMAX

A product qualification document is available at: