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6 August 2019

Cree wins $85m multi-year deal to supply silicon carbide wafers to ON Semiconductor

A multi-year agreement worth more than $85m has been executed whereby Cree Inc of Durham, NC, USA will produce and supply its Wolfspeed 150mm silicon carbide (SiC) bare and epitaxial wafers to ON Semiconductor Corp of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – for use in high-growth markets, such as electric vehicle and industrial applications.

“ON Semiconductor continues to be a leader in driving the development of energy-efficient innovations and devices,” says ON Semiconductor VP & chief procurement officer Jeffrey Wincel. “Partnering with Cree is essential in maintaining a world-class supply base. This agreement supports our commitment to growing automotive and industrial applications and ensuring the availability of industry-leading silicon carbide that helps engineers solve their unique design challenges,” he adds.

“We are committed to leading the global semiconductor market’s transition from silicon to silicon carbide solutions and are pleased to support ON Semiconductor as we work to accelerate this market,” says Cree’s CEO Gregg Lowe. “This is the fourth major long-term agreement for silicon carbide materials that we have announced in the past year and a half,” he notes. “We will continue to drive silicon carbide adoption and availability through ongoing wafer supply agreements, such as this, and our recently announced major capacity expansion.”

See related items:

Cree chosen as silicon carbide partner for Volkswagen’s FAST program

Cree investing $1bn to expand SiC materials production and power & RF fab capacity by up to 30-fold

Cree and ST sign multi-year SiC wafer supply agreement

Cree signs long-term SiC wafer supply deal with leading power device maker

Cree signs $100m long-term deal to supply 150mm SiC wafers to Infineon

Tags: Cree Wolfspeed SiC Power electronics

Visit: www.cree.com

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