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22 October 2018

GaN RF device market to grow at double-digit CAGR to over $1.5bn by end-2026

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

The gallium nitride (GaN) radio-frequency (RF) devices market is projected to register a high double-digit compound annual growth rate (CAGR) over 2017-2026, surpassing $1.5bn in revenue by end-2026, according to a report from Fact.MR.

With the upsurge of the wireless communication industry and steady yet continuous progress in conventional military applications, RF devices are playing a pivotal role in several respects, further increasing demand for high-performance RF devices, notes the report.

In mobile communications, next-generation smartphones need improved efficiency and wide bandwidth. RF amplifiers with higher frequency and power are essential for TV broadcasting and developing satellite communications, in order to reduce antenna size in terminals. A similar requirement holds for broadband wireless internet connections due to the ever increasing data transmission rate.

These requirements have necessitated the development of higher-performance RF devices based on GaN, in order to benefit from its wider bandwidth.

More sectors are incorporating RF technology in their operating systems, creating new application areas for RF engineers to work on. The selection of an RF technology depends greaty on the heat, size, cost, power, advancement rate, efficiency and speed required for the application. GaN RF devices are preferred for such applications. GaN RF technology has hence emerged as an effective choice for new millimeter-wave and microwave electronics such as electronic warfare, communications, satellite and radar.

Future of GaN RF device market

  • On the basis of end-users, telecoms will remain the dominant application, with revenues poised to account for nearly half of the market by the end of 2026. Aerospace & defense and automotive are also expected to hold major market shares during the forecast period. Sales of GaN RF devices for medical devices and industrial end-uses are projected to see a parallel expansion through 2026. Revenue from industrial end-users of GaN RF devices will continue to be sluggish.
  • Wireless infrastructure will continue to be the most lucrative application of GaN RF devices, with revenues set to account for more than two-fifth market share by end-2026. Photovoltaic (PV) inverters are also expected to remain a financially worthwhile application of GaN RF devices.
  • GaN RF device sales for applications in hybrid and electric vehicle (HEV) components are projected to rise at the highest CAGR through 2026. HEV charging equipment and wireless infrastructure applications are expected to grow at equal CAGRs through 2026. Satellite communications and cable TV (CATV) will continue to be the least lucrative applications of GaN RF devices.
  • On the basis of product type, discrete GaN RF devices are expected to remain dominant in the market in terms of revenue (projected to hold more than four-fifths of market share by end-2026). Demand for module GaN RF devices is expected to remain sluggish.
  • The Asia-Pacific region excluding Japan (APEJ) is expected to remain the largest market for GaN RF devices, surpassing $1bn by end-2026. The market share of Japan and North America will also remain significant, but revenue from APEJ will remain larger than that combined from Japan and North America.

The report cites key market players as Infineon, Renesas, Panasonic, Mitsubishi Electric, Toshiba, Hitachi, STMicroelectronics, Bosch, Sumitomo Electric, and Raytheon.

See related items:

RF power amplifier market to grow from $3bn by 3.2x, at 12.2% CAGR, through 2028

Tags: GaN RF

Visit: www.factmr.com/report/383/gan-rf-devices-market

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