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27 March 2015

Qorvo boosts optical bandwidth with new 90nm GaAs pHEMT process for next-gen high-frequency amplifiers

At the Optical Fiber Communication conference & exposition (OFC 2015) in Los Angeles (24-26 March), Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides RF solutions for mobile, infrastructure and aerospace/defense applications) has launched a new gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) process technology that provides higher gain/bandwidth and lower power consumption than competing semiconductor processes, it is claimed.

TQPHT09 is a 90nm pHEMT process that supports the firm's next-generation optical product portfolio. Coupled with reliability, the new process is suitable for next-generation high-frequency, high-performance amplifiers required for 100G+ linear applications.

Manufactured in Qorvo's GaAs fabrication facility in Richardson, Texas, TQPHT09 is the newest process in the firm's well-established pHEMT portfolio. It serves as the basis for several new optical modulator driver products including the TGA4960-SL, the firm's most advanced quad-channel 100G modulator driver. The TGA4960-SL is available in the CFP2 form factor for metro and long-haul applications, and is also well suited to upgrading the 100G linear dual-channel drivers for line-card applications. It is optimized for high performance, low power dissipation and high channel-to-channel isolation, and is packaged in a 14.0mm x 8.0mm x 2.6mm SMT module (claimed to be the smallest footprint in the industry).

Tags: Qorvo

Visit: www.qorvo.com/optical

Visit: www.triquint.com/products/p/TGA4960-SL

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