ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter


17 July 2014

BeRex adds family of MESFET chips

BeRex Inc of San Jose, CA, USA (which designs and manufactures RF and microwave GaAs devices) has announced the immediate availability of a new family of low-phase-noise, high-linearity metal–semiconductor field-effect transistors (MESFET) chips to complement its line of pHEMT transistors.

The new BCF-series addresses the need for low phase noise with high gain and power in both broad-band and narrow-band applications (such as single- and multi-stage amplifiers, oscillators, synthesizers, etc) ranging in frequency from DC to 26.5GHz. Typical applications require a high level of OIP3 (output third-order intercept point) linearity and a low phase noise that cannot be easily achieved with other technologies, it is claimed.

The BCF-series family consists of seven devices, each fabricated using a 0.25µm gate length and with a gate width of 200µm, 300µm, 400µm, 600µm, 800µm, 1200µm or 2400µm, depending on the client’s gain and power requirements (up to 1 Watt for the largest 2400µm device).

The BCF-series of MESFET chips is produced in the USA using what’s claimed to be state-of-the-art metallization, plus Si3N4 passivation to optimize reliability.

“These parts, along with our existing pHEMT family of packaged and bare-die FET products, go a long ways towards fulfilling the commitment to our clients of becoming their one-stop source for their RF and microwave FET needs,” says VP of research & development Dr Alex Yoo.

The BCF-series of chips is now available in sample and production volumes.


Visit: www.berex.com

See Latest IssueRSS Feed