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25 March 2009


Raytheon awarded $29.3m Phase 3 contract for wide-bandgap program

Raytheon Company of Waltham, MA, USA has been awarded a $23.9m phase 3 contract from the US Defense Advanced Research Projects Agency (DARPA) to continue work on the agency's Wide Bandgap Semiconductor (WBGS) Development program.

This 38-month phase of the program is a collaboration between DARPA and the Missile Defense Agency (MDA). Its objective is to rapidly mature and demonstrate the capabilities of gallium nitride (GaN) to improve the performance of missile defense radars. To accelerate the technology development, it will combine the results of Raytheon’s DARPA-funded WBGS Phase 2 and the MDA-funded Next Generation Transmit Receive Integrated Microwave Module programs.

"Our research continues to demonstrate that GaN technology will improve the capability and performance of current and future military systems," says Michael Del Checcolo, VP of engineering for Raytheon Integrated Systems of Tewksbury, MA. "Under the WBGS program, we have the opportunity to combine research findings from multiple organizations, allowing us to develop and provide the most advanced technologies."

Work under the new contract will be performed by Raytheon IDS at the Integrated Air Defense Center in Andover and the Surveillance and Sensors Center in Sudbury (both in Massachusetts).

See related items:

Raytheon wins non-lethal weapons solid-state source contract

Raytheon awarded $1m contract for active electronically scanned lens array

Raytheon demos GaN in radar components

Raytheon’s next-generation GaN MMICs complete 8,000 hours of operational testing

Search: Raytheon GaN Radar