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News

20 July 2007

 

NIEC to launch SiC Schottky diodes in Japan using Cree’s chips

Cree Inc of Durham, NC, USA has reached an agreement for its silicon carbide chips to be used by silicon-based power semiconductor manufacturer Nihon Inter Electronics Corp (NIEC) of Hadano City, Japan in a line of SiC-based Schottky power rectifier diodes to be introduced in Japan.

“Our market is showing growing demand for the far greater efficiency and performance offered by silicon carbide-based diodes, which enables reduced energy consumption in applications for home appliances including air conditioner and automotive invertors,” says NIEC president Masao Ishii .

Specifically, Cree says that, compared with traditional silicon-based diodes, its SiC-based rectifiers can:

• simplify power factor correction (PFC) boost design by eliminating the need for snubbers and reducing component count;
• reduce power losses, leading to cooler operating temperatures;
• produce significantly less electromagnetic interference (EMI).

“Our agreement with NIEC will allow us access to their extensive marketing and sales channels in Japan, and is consistent with our current strategy to create a more global sales and marketing presence,” says John Palmour, Cree’s executive VP for advanced devices. “We are excited about the potential impact our two companies can make on the Japanese market by combining our strengths.”

See related items:

Cree launches highest-power, 50A SiC Schottky rectifier

Digi-Key and Cree announce global distribution agreement for SiC power devices

Visit Cree: http://www.cree.com

Visit NIEC: http://www.niec.co.jp