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9 July 2020

Mitsubishi Electric unveils SiC MOSFET circuit simulation model

On 8 July, at the online International Conference on Power Conversion and Intelligent Motion (PCIM Europe 2020), Tokyo-based Mitsubishi Electric Corp presented a new, highly accurate SPICE (Simulation Program with Integrated Circuit Emphasis) model for analyzing the electronic circuitry of discrete power semiconductors (T. Masuhara, T. Horiguchi, Y. Mukunoki, T. Terashima, N. Hanano and E. Suekawa, ‘Development of an Accurate SPICE Model for a New 1.2-kV SiC-MOSFET Device’). The technology is deployed in the N-series 1200V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), samples of which begin shipping in July.

The firm says the model simulates high-speed-switching waveforms almost as well as actual measurements, on a level of accuracy currently believed to be unmatched in the industry, which is expected to lead to more efficient circuit designs for power converters.

Going forward, Mitsubishi Electric expects to add several temperature-dependent parameters to enable its SPICE model to work at high temperature.

See related items:

Mitsubishi Electric launching 1200V SiC MOSFET

Tags: Mitsubishi Electric SiC power MOSFET

Visit: www.MitsubishiElectric.com/semiconductors

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