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19 March 2019

Littelfuse launches 650V SiC Schottky diodes with new package sizes and current ratings from 6A to 40A

At the Applied Power Electronics Conference & Exposition (APEC 2019) in Anaheim, CA (17-21 March), Littelfuse Inc of Chicago, IL, USA, which provides circuit protection technologies (including fuses, semiconductors, polymers, ceramics, relays and sensors), has introduced two additions to its expanding line of second-generation 650V, AEC-Q101-qualified silicon carbide (SiC) Schottky diodes.

Both series offer power electronics system designers performance advantages over traditional silicon-based devices, including negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175°C, making them suitable for applications in which improved efficiency, reliability and thermal management are desirable.

The LSIC2SD065DxxA Series SiC Schottky diode is available with current ratings of 6A, 10A or 16A in a TO‑263-2L package. The LSIC2SD065ExxCCA Series SiC Schottky diode is available with current ratings of 12A, 16A, 20A or 40A in a TO-247-3L package. Both are available in tape-and-reel format, with a minimum order quantity of 800 devices.

The SiC Schottky diodes dissipate less energy and can operate at higher junction temperatures than alternative solutions such as standard silicon bipolar power diodes. They also require smaller heat sinks and support a smaller system footprint. These advantages offer end-users the benefits of more compact, energy-efficient systems and a potential lower total cost of ownership, says the firm.

Typical applications for the new 650V SiC Schottky diodes include: electric vehicle (EV) charging stations; buck/boost stages in DC-DC converters; free-wheeling diodes in inverter stages; high-frequency output rectification; and power factor correction (PFC).

“These additions to our fast-growing 650V SiC Schottky diode family allow us to offer a broader selection of current ratings and package designs suitable for a wider range of applications,” says Silicon Carbide product marketing manager Christophe Warin. “These new SiC Schottky diodes enable a variety of design optimization opportunities, including increased power density, higher efficiency and potentially lower bill of materials costs.”

The new 650V SiC Schottky diodes are said to offer the following benefits:

  • AEC-Q101-qualified diodes exhibit exceptional performance in demanding applications.
  • Suitable for high-frequency power switching.
  • Safe operation and ease of paralleling for reduced stress on the opposing switch.
  • Larger design margin and relaxed thermal management requirements due to 175°C maximum operating junction temperature.

See related items:

Littelfuse launches its first 650V SiC Schottky diodes

Littelfuse launches its first GEN2 1200V SiC Schottkys

Tags: SiC Schottky barrier diodes SiC power devices

Visit:  www.apec-conf.org

Visit:  www.littelfuse.com

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