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13 March 2019

EPC showcasing eGaN performance in high-power-density DC-DC conversion and multiple high-frequency applications

At the Applied Power Electronics Conference (APEC 2019) in Anaheim, CA, USA (17-21 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – is delivering 11 technical presentations on gallium nitride technology and applications. In addition, it is demonstrating its latest eGaN FETs and ICs in customers’ end products enabled by eGaN technology.

In booth, #953, demonstrations addressing DC-DC power levels starting at 120W to 3kW include a high-power-density 48V–12V non-isolated, bidirectional converter capable of delivering 3kW. In addition, a range of 3D real-time LiDAR imaging sensors used in autonomous vehicles is being displayed. Also on display is a high-power resonant wireless charging solution capable of wirelessly powering a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smartwatches and table lamps. Redefining the power conversion component, a new GaN IC will be shown.

In addition, technical presentations featuring GaN FETs and integrated circuits by EPC include:

  • Educational Seminar: ‘WBG Device Characterization for Converter Design: Challenges and Solutions’ – Instructors: Dr Fred Wang, Dr Zheyu Zhang, Dr Edward A. Jones;
  • ‘Evaluation of GaN-Based Multilevel Converters’ - Presenter: Dr Yuanzhe Zhang;
  • ‘GaN’s Frontal Assault on Silicon at 48 Volts’ - Presenter: Dr Alex Lidow;
  • ‘Design and Measurement of High Power Nanosecond Pulse Circuits for Laser Drivers’ - Presenter: Dr John Glaser;
  • ‘Evaluation of Symmetrical and Asymmetrical Scaling GaN FETs in High Step-down Ratio HalfBridge Converters’ - Presenters: Dr Jianjing Wang, Dr Edward Jones, Dr Michael de Rooij;
  • ‘GaN-Based High-Density Unregulated 48V to x V LLC Converters with ≥98% Efficiency for Future Data Centers’ - Presenters: Mohamed Ahmed, Dr Michael de Rooij;
  • ‘Improving Efficiency in Highly Resonant Wireless Power Systems’ - Presenters: Dr Michael de Rooij, Dr Yuanzhe Zhang;
  • ‘Rectifier Topology Optimization in Resonant Wireless Power Systems Presenters’ - Dr Michael de Rooij, Dr Yuanzhe Zhang;
  • ‘Thermal Design for a High-Density GaN-Based Power Stage’ - Presenter: Dr Edward Jones;
  • ‘GaN Reliability for Automotive - Testing Beyond AEC-Q’ - Presenter: Dr Robert Strittmatter;
  • ‘Hard-Switching Dynamic Rdson Characterization of a GaN FET with an Active GaN-Based Clamping Circuit’ - Presenter: Dr Edward Jones.

Tags: E-mode GaN FETs Power electronics

Visit:  www.apec-conf.org

Visit:  www.epc-co.com

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