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4 June 2019

EPC to provide eGaN power devices in wafer form for ease of power systems integration

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has announced the availability of its enhancement-mode GaN devices in wafer form for ease of integration. The firm’s eGaN FETs and ICs are traditionally sold as singulated chip-scale devices with solder bars or solder bumps.

Chip-scale packaging is a more efficient form of packaging that reduces the resistance, inductance, size, thermal impedance and cost of power transistors. These attributes of eGaN devices enable unmatched in-circuit performance at competitive prices, claims EPC.

Wafer-level offerings of these devices allows easier integration in customer power system sub-assemblies, further reducing device interconnect inductances and the interstitial space needed on the printed circuit board (PCB), says the firm, adding that this increases both efficiency and power density while reducing assembly costs.

“We have listened to our partners and are pleased to offer our industry-leading GaN products in wafer form that can accommodate a variety of assembly techniques and applications,” says CEO & co-founder Alex Lidow.
EPC is offering eGaN power devices in wafer form either with or without solder bumps. Extra services such as wafer thinning, metallization of the wafer backside and the application of backside coating tape are also available.

Tags: EPC E-mode GaN FETs GaN-on-Si Power electronics

Visit: www.epc-co.com

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