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10 January 2019

Mitsubishi develops ultra-wideband digitally controlled GaN amplifier for mobile base stations

Tokyo-based Mitsubishi Electric Corp has developed the first ultra-wideband digitally controlled gallium nitride (GaN) amplifier, which is compatible with a range of sub-6GHz bands focused on fifth-generation (5G) mobile communication systems.

The new ultra-wideband digitally controlled GaN amplifier uses an advanced load modulation circuit with two parallel GaN transistors. The circuit expands the bandwidth of load modulation, a key factor for the amplifier’s high efficiency, for wideband (1.4–4.8GHz) operation. The wide-band operation supports several frequency bands.

Digitally controlled input signals for the amplifier realize high-efficiency load modulation of above 40% over 110% of the fractional bandwidth. Digital control employs learning functions based on Maisart (Mitsubishi Electric’s AI creates the State-of-the-ART in technology).

With a power efficiency rating of over 40%, the amplifier can help to reduce power consumption in mobile base stations, contributing to large-capacity communications.

Tags:  Mitsubishi Electric GaN HEMT

Visit:  www.MitsubishiElectric.com/semiconductors

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