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22 February 2019

RFHIC signs $54m multi-quarter deal to buy GaN-on-SiC HEMT transistors from Wolfspeed

RFHIC Corp of Anyang, South Korea (which designs and makes active RF & microwave high-power components and hybrid modules for telecoms, defense industries, consumer goods and customized solutions) has signed a multi-quarter agreement worth a minimum of $54m to purchase gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) from Cree company Wolfspeed of Durham, NC, USA.

RFHIC says that the agreement solidifies the collaboration between the two firms to expand its growing share of the RF market, including upcoming 5G applications. RFHIC has commercialized GaN-based RF power transistors and power amplifiers for 4G LTE networks and expects to continue this role in the 5G market.

“This agreement with Wolfspeed will help us meet our customers’ ever-increasing demand for higher capacity and performance of our RF solutions, and long-term visibility,” believes RFHIC’s chief technology officer & chairman Samuel Cho.

Tags:  RFHIC Wolfspeed GaN RF

Visit:  www.rfhic.com

Visit:  www.wolfspeed.com/RF

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