PSMA-sponsored Industry Sessions at APEC address ‘Coming of Age’ of wide-bandgap power semiconductors

The Power Sources Manufacturers Association (PSMA) Semiconductor Committee is sponsoring a series of three Industry Sessions on 19-21 March at the IEEE Applied Power Electronics Conference and Exposition (APEC 2019) in the Anaheim Convention Center in California that address the rapid emergence of wide-bandgap semiconductors as a significant power conversion technology.

Taken as a whole, the series of Industry Sessions will address the ‘Coming of Age’ of gallium nitride (GaN) and silicon carbide (SiC) power semiconductors, with each session focusing on one aspect of the topic:

IS4: 19 March (8:30-11:55am) ‘Getting up to speed on switching: wide bandgap and other high-performance components’;
IS11: 20 March (2-5:25pm) ‘Current reliability and product qualification topics for SiC and GaN wide bandgap devices’;
IS16: 21 March (8:30-11:30am) ‘Production use cases of wide bandgap semiconductors: systems in production today, drivers and controllers for tomorrow’.

“SiC and GaN have been the most popular topics at APEC over the past several years. It is clear that the promise that these devices have offered in size and efficiency gains are being realized,” comments PSMA Semiconductor Committee chairman Tim McDonald. “This ‘Coming of Age’ series of Industry Sessions will serve to inform attendees on this vital technology area,” he adds. In addition to presentations, the Industry Sessions will enable attendees to interact and network with industry colleagues engaged in power conversion system design.

All APEC attendees are invited to attend the PSMA Semiconductor Committee meeting on Wednesday 20 March (8-10am) in the Marriott Hotel (Meeting Room Platinum 10).

Tags: Power electronics GaN SiC power devices

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