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4 December 2019

Navitas showcasing GaNFast power IC technology in fast-chargers for mobile devices at CES 2020

Navitas Semiconductor Inc of El Segundo, CA, USA is to showcase its GaNFast power IC technology, in addition to partnerships with major electronics brands, in booth #30067 (South Hall 3) at the 2020 Consumer Electronics Show (CES) in the Las Vegas Convention Center (7–10 January).

Founded in 2014, Navitas introduced what it claimed to be the first commercial gallium nitride (GaN) power ICs. The firm says that its proprietary ‘AllGaN’ process design kit (PDK) monolithically integrates GaN power field-effect transistors (FETs) with GaN power, analog and logic circuits, enabling faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets.

“Continued demand for more powerful smartphones, tablets and laptops with larger screens and 5G capability has created a multi-billion-dollar market for next-generation fast-chargers,’ says CEO Gene Sheridan. “With 25 GaN chargers and adapters on display ranging from 27W to 300W, powering everything from phones to drones, the mobile charger market will never be the same again,” he adds.

Navitas says that CES attendees can discover GaN technology and the breadth of GaNFast chargers, experience faster charging using their own mobile device, and have chances to win a new GaNFast charger or $1000 in cash if they ‘Beat the GaNMan!’ in a racing simulator on the Navitas booth.

“Since 2018, millions of GaN chargers have been shipped by big-name brands such as Samsung, Oppo, Anker, Verizon and NVIDIA, with dozens more in progress,” notes Stephen Oliver, VP of sales & marketing.

Tags: GaN Power electronics

Visit: www.ces.tech

Visit: www.navitassemi.com

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