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19 September 2018

Delta uses Transphorm’s high-voltage GaN FETs to shrink power supply by 25%

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Power electronics and thermal management solutions provider Delta Electronics says that its latest 80Plus Platinum 800W power supply unit (PSU) – which now offers a backup lithium-ion battery – benefits from the use of high-voltage (HV) GaN FETs from Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified high-voltage (HV) gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion applications.

Should a data center lose power, the PSU’s battery will keep connected servers running for one minute — long enough to allow for a proper power-down sequence. The use of GaN enabled Delta to reduce the power system size by ~25%, allowing the inclusion of a battery within a CRPS form factor.

The design stems from Delta’s experience working with GaN power semiconductors in an effort to equip customers with high-performing power solutions. The decision to use HV GaN devices depended partly on meeting new product reliability and power density objectives. Delta also sought to repurpose its existing PSU design—a standard PFC continuous-conduction mode (CCM) boost converter.

Market analyst firm Yole Développement projects that the use of GaN within server power supplies will grow to about $50m by 2022, comprising the third largest segment of the total GaN power device market (~$450m by 2022), behind broad industrial power supplies.

Tags: Transphorm GaN-on-Si GaN HEMT Power electronics

Visit: www.transphormusa.com/design-resources

Visit: www.deltaww.com

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