Integra launches L-band RF power amplifier module for IFF/SSR avionics systems

Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power RF and microwave transistors and power amplifier modules, has launched an RF power amplifier module/pallet designed to solve various size, weight, power and cost challenges (SWaP-C) in high-performance L-band avionic systems.

The IGNP1011L2400 is a high-power gallium nitride on silicon carbide (GaN-on-SiC) RF power amplifier module/pallet that has been designed specifically for IFF/SSR (identification friend or foe/secondary surveillance radar) systems operating under either Mode S ELM (48x {32μs on, 18μs off}, 6.4% long-term duty cycle) or standard Mode S (128μs, 2% duty cycle) pulse conditions.

It supplies a minimum of 2200W of peak output power, with typically >16dB of gain and 57% efficiency and operates from a 50V supply voltage. The RF power amplifier module/pallet is matched to 50Ω at both input and output and is suitable for both 1030MHz and 1090MHz frequencies.

Tags: Integra GaN-on-SiC HEMT

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