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14 November 2018

ROHM unveils 1700V SiC power module with high reliability in extreme environments

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Power semiconductor maker ROHM of Kyoto, Japan has announced the development of a 1700V/250A-rated SiC power module that provides what is claimed to be the industry’s highest level of reliability optimized for inverter and converter applications such as outdoor power generation systems and industrial high-power supplies.

In recent years, due to its energy-saving benefits, SiC has been seeing greater adoption in 1200V applications such as electric vehicles (EVs) and industrial equipment. The trend towards higher power density has resulted in higher system voltages, increasing the demand for 1700V products. However, it has been difficult to achieve the desired reliability, so silicon-based insulated-gate bipolar transistors (IGBTs) are typically preferred for 1700V applications.

In response, ROHM has been able to achieve high reliability at 1700V, while maintaining the energy-saving performance of its 1200V SiC products, achieving what is claimed to be the first commercialization of 1700V-rated SiC power modules.

The new BSM250D17P2E004 introduces a new packaging method and coating materials to protect the chip from dielectric breakdown and suppress increases in leakage current, allowing the module to pass the HV-H3TRB reliability tests. For example, during this high-voltage, high-temperature, high-humidity reverse bias testing it exhibited no failures when 1360V is applied for more than 1000 hours at 85°C and 85% humidity, unlike conventional IGBT modules that typically fail within 1000 hours due to dielectric breakdown. To ensure the highest level of reliability, ROHM tested the leakage current of the modules at different intervals with the highest level of blocking voltage 1700V.

Incorporating ROHM’s proven SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) and SiC Schottky barrier diodes (SBDs) into the same module and optimizing the internal structure makes it possible to achieve an ON-resistance 10% lower than other SiC products in its class. This translates into improved energy savings and reduced heat dissipation in any application, says ROHM.

Going forward, ROHM aims to continue to expand its lineup and at the same time offer evaluation boards that allow easy testing and verification of its SiC modules.

See related items:

Rohm showcasing new third-generation 650V SiC Schottkys and 1200V/180A full-SiC modules at PCIM

Tags: Rohm SiC Schottky barrier diodes SiC power MOSFET

Visit: www.rohm.com/web/global/full-sic-power-modules

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