12 September 2017
Wolfspeed transitions 28V GaN HEMTs from 0.4µm to 0.25µm process, boosting frequency, gain and efficiency
Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has launched a series of 28V GaN HEMT RF power devices capable of higher-frequency operation to 8GHz with increased efficiency and higher gain as well as what is claimed to be best-in-class reliability, enabling RF design engineers to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
The new 28V GaN HEMT devices have been developed using Wolfspeed’s proven 0.25µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4µm devices, making it possible for RF design engineers to use them as drop-in replacements for the earlier devices in existing designs. Available as both packaged devices (CG2H400 Series) and bare die (CG2H800 Series), the new GaN HEMTs deliver 33% higher frequency operation to 8GHz (from 6GHz), an additional 1.5-2.0dB of gain, as well as a 5-10% boost in operating efficiency compared with Wolfspeed’s earlier-generation devices.
“By moving to our proven 0.25µm process for these next-generation devices, we are able to deliver significant performance advantages to a wide range of customers while maintaining the superior reliability these types of applications require,” says RF and microwave director Jim Milligan. “Offering these new devices in the same packages as our previous generation parts enables RF design engineers to quickly and easily boost the performance of their RF amplifiers.”
The higher efficiency (up to 70% at PSAT) and higher bandwidth capability makes the devices suitable for an extensive range of RF power amplifier applications, including military communications systems, radar equipment (UHF, L-, S-, C-, and X-band), electronic warfare (EW) and electronic counter-measure (ECM) systems as well as commercial RF applications in the industrial, medical & scientific (ISM) band.
The CG2H400 Series include the following packaged 28V unmatched GaN HEMT devices (available in screw-down flanged or solder-down pill packages):
- CG2H40010 – 10W, 8GHz operation with 70% efficiency (at PSAT) and 18dB/16dB small-signal gain (at 2.0GHz and 4.0GHz, respectively);
- CG2H40025 – 25W, 6GHz operation with 65% efficiency (at PSAT) and 17dB/15dB small-signal gain (at 2.0GHz and 4.0GHz, respectively);
- CG2H40045 – 45W, 4GHz operation with 60% efficiency (at PSAT) and 18dB/14dB small-signal gain (at 2.0GHz and 4.0GHz, respectively).
The CG2H800 Series include the following bare die 28V unmatched GaN HEMT devices:
- CG2H80015 – 15W, 8GHz operation with 65% efficiency (at PSAT) and 17dB/12dB small-signal gain (at 4.0GHz and 8.0GHz, respectively);
- CG2H80030 – 30W, 8GHz operation with 65% efficiency (at PSAT) and 17dB/12dB small-signal gain (at 4.0GHz and 8.0GHz, respectively);
- CG2H80060 – 60W, 8GHz operation with 65% efficiency (at PSAT) and 15dB/12dB small-signal gain (at 4.0GHz and 8.0GHz, respectively).
Compared with conventional silicon and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices deliver higher breakdown voltage, higher-temperature operation, higher efficiency, higher thermal conductivity, higher power density and wider bandwidths, all of which are critical for achieving smaller, lighter and more efficient microwave and RF products. They enable next-generation broadband, public safety and ISM amplifiers; broadcast, satellite and tactical communications amplifiers; unmanned aerial vehicle (UAV) data links; cellular infrastructure; test instrumentation; and two-way private radios.