, Navitas chosen by PowerAmerica to enable high-efficiency, high-density mobile fast chargers

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1 September 2017

Navitas chosen by PowerAmerica to enable high-efficiency, high-density mobile fast chargers

PowerAmerica — a manufacturing institute consisting of public and private partners from the semiconductor industry, the US Department of Energy (DoE), national laboratories and academia — in early August selected Navitas Semiconductor Inc of El Segundo, CA, USA to enable a new class of high-efficiency, high-density mobile fast chargers.

Using its proprietary ‘AllGaN’ technology, Navitas’ gallium nitride (GaN) power ICs integrate high-voltage GaN field-effect transistors (FETs) with logic, drive and protection circuits to allow power systems to operate at frequencies above 1MHz. This high-speed operation, with simultaneous improvement in efficiency, yields dramatically reduced system size, weight and cost — and 3x faster charging for the consumer, it is reckoned. “Our GaN power ICs, with their unprecedented level of integration, speed and efficiency, are uniquely qualified to deliver on this market-driven challenge,” reckons CEO Gene Sheridan.

“Navitas and PowerAmerica share a common vision for increasing technical capabilities and creating manufacturing jobs in wide-bandgap technology,” comments PowerAmerica’s chief technology officer Victor Veliadis. “We are confident this cooperation will yield remarkable results, including a world-class mobile fast charger.”

See related items:

Navitas launches first integrated half-bridge GaN power IC

Navitas delivers first GaN power ICs

Tags: GaN Power electronics

Visit: www.poweramericainstitute.org

Visit: www.navitassemi.com

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