18 September 2017
Ascatron launches its first SiC power device products
Ascatron AB of Kista, Stockholm, Sweden (which was spun out of research institute Acreo in 2011) says that it is now providing silicon carbide (SiC) power semiconductor devices using its proprietary 3DSiC technology.
With background in producing SiC epitaxial material for global customers, Ascatron has recently transformed from a service provider to a device product company. The first products available for customer testing are diodes rated to 1200V, 1700V and 10kV. MOSFET switches are under development and will be introduced 2018.
“We have developed a unique material technology that makes it possible to fully use the potential of SiC to handle very high power with minimal losses, while maintaining the reliability of silicon,” says chief technology officer Adolf Schöner. “We call it 3DSiC and it is based on our expertise in producing advanced SiC epitaxy material. The technology has the potential to lower the losses up to 30% compared to conventional solutions,” he reckons.
The 3DSiC technology enables a modular design of Ascatron product line. Each device is divided into a high-voltage module (related to the desired voltage class) and a low-voltage part (for each type of component). Combination of different modules gives a wide range of products.
“Our business target is to be highly trusted and innovative supplier of SiC semiconductors for power electronics in industry, automotive and energy,” states CEO Christian Vieider. “We foresee a period of technology change when shifting from silicon to SiC,” adding that the firm aims to take part in such industry consolidation.
The business model is semi-fabless, where Ascatron designs the power device and maintains in-house production of the key epitaxy material, while chip fabrication and packaging are outsourced. In addition, to address the Chinese market a company has been set up in Shenzhen with a local partner.
Ascatron notes that it will continue to support customers with small-scale manufacturing of SiC epi material.