, Wolfspeed showcasing devices designed for counter-IED & mobile military communications systems at MILCOM

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23 October 2017

Wolfspeed showcasing devices designed for counter-IED & mobile military communications systems at MILCOM

At the MILCOM 2017 (military communications) conference & exhibition in Baltimore, MD (23–25 October), Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — is highlighting the role played by its GaN-on-SiC RF devices in delivering solutions for modern military communications challenges. The firm’s RF devices support mobile military communications and counter-IED requirements, specifically in the design and development of more efficient broadband power amplifiers for military wireless communications and electronics warfare (EW) applications.

“Wolfspeed’s GaN RF devices provide a key enabling technology for military systems designed to counter the threat from improvised explosive devices (IEDs) on the battlefield, delivering a combination of power and efficiency performance that cannot be achieved with any other competing technology,” claims Jim Milligan, vice president, RF and Microwave Products.

Wolfspeed is a silver sponsor of MILCOM 2017. In booth #827 at the Baltimore Convention Center, Wolfspeed engineers are demonstrating their latest best-in-class GaN-on-SiC devices for an extensive range of RF power amplifier applications for military communications systems and electronic warfare systems, as well as the firm’s GaN-on-SiC foundry services.

Tags: Wolfspeed GaN RF GaN-on-SiC

Visit: http://events.afcea.org/MILCOM17/Public

Visit: www.wolfspeed.com/RF

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