, WIN enables fully integrated single-chip GaAs solutions for 5G RF front-end modules

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2 October 2017

WIN enables fully integrated single-chip GaAs solutions for 5G RF front-end modules

WIN Semiconductors Corp of Taoyuan City, Taiwan – the largest pure-play compound semiconductor wafer foundry – says that it is enabling fully integrated single-chip solutions for 5G front-end modules with its PIH1-10 gallium arsenide (GaAs) platform. The PIH1-10 process integrates monolithic PIN diodes, capable of power switching through 50GHz, into a 100GHz fT pseudomorphic high-electron-mobility transistor (pHEMT) platform. This technology provides the transmit power performance and lower receiver noise figure required for 5G systems.

WIN says that the versatile technology provides users with multiple pathways to add on-chip functionality and higher integration. In addition to monolithic PIN diodes and high-performance pHEMT devices, the PIH1-10 platform offers linear Schottky diodes for mixers or detectors, as well as enhancement and depletion transistors optimized for logic functionality and bias controls. When combined with RF isolated through-wafer vias, the humidity-resistant technology enables a wafer-level package option for compact chip integration in MIMO functions where available board space is limited.

“The PIH-10 technology leverages WIN’s qualified production techniques and industry-leading manufacturing scale to provide a new platform that can be extended and optimized to address rapidly evolving market requirements,” says senior VP David Danzilio. “Compound semiconductors, and particularly GaAs, remain the technology of choice for demanding amplifier functions from 500MHz through 100GHz and above. This advantage comes from higher gain, linearity and power-added efficiency provided by GaAs devices as compared to RF CMOS or SiGe [silicon germanium]. This performance advantage will be critical in the 28-40GHz bands envisioned for 5G, where gain and efficiency at 6-10dB back-off will determine system-level performance,” he adds. “WIN’s GaAs pseudomorphic HEMT is the foundation for many of todays high-performance amplifiers operating in the 20-100GHz range, and incorporating low-loss PIN switch functionality enables our customers to field unique single-chip 5G solutions without sacrificing performance.”

WIN is showcasing its compound semiconductor RF and mm-wave solutions on stand 111B at European Microwave Week (EuMW 2017) in Nurnberg, Germany (8-13 October).

Tags: WIN Semiconductors

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