, GaN Systems launches evaluation board combining GaN power transistors with Peregrine’s E-HEMT drivers

Temescal

Semigas

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

19 October 2017

GaN Systems launches evaluation board combining GaN power transistors with Peregrine’s E-HEMT drivers

GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has made available the GS61004B-EVBDC evaluation board, which combines what are claimed to be best-in-class GaN power transistors with the fastest commercially available GaN transistor driver.

The GS61004B-EVBDC evaluation platform is now available with the latest high-speed GaN E-HEMT drivers from Peregrine Semiconductor Corp of San Diego, CA, USA, a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI). The evaluation kit combines four of GaN Systems’ GS61004B GaN power transistors with two of Peregrine’s PE29102 E-HEMT drivers, providing power design engineers with benefits including: GaN transistors operable up to 100MHz; a transistor driver operable up to 40MHz; what is claimed to be a best-in-class propagation delay; optimized, Vcc independent, for matched dead time; and integrated dead-time control, resistor-adjustable.

The GS61004B GaN E-HEMTs generate low dead times to minimize crossover distortion in class-D applications. The PE29102’s unique set of phase-control pins enables the same part to be used for both phases in bridge-tied load (BTL) configurations — a technique used in audio amplifiers.

“By providing an evaluation kit with GaN Systems’ world’s-best power transistors and Peregrine Semiconductor’s fastest-ever GaN transistor driver, design engineers have an easy-to-use platform for optimizing their system’s performance and gaining a competitive advantage,” says Paul Wiener, VP strategic marketing for GaN Systems.

“By enabling GaN to reach its performance potential, UltraCMOS technology and Peregrine are playing a role in GaN’s disruption into more mainstream applications,” reckons Mark Moffat, director of Peregrine’s power management product line. “In the case of audio, GaN technology is enabling the next-generation of class-D audio advancements.”

The GS61004B-EVBDC evaluation platform includes a GaN E-HEMT driver GS61004B full-bridge evaluation board assembly and detailed user’s guide, and is available worldwide through distribution channels, priced at $99 each.

See related items:

Peregrine’s new PE29102 FET driver brings fastest switching speeds to GaN class-D audio

Peregrine unveils fastest GaN FET driver

Tags: GaN Systems E-mode GaN FETs Peregrine

Visit: www.gansystems.com

Visit: www.psemi.com

Share/Save/Bookmark
See Latest IssueRSS Feed

AXT