, eLASER orders further Aixtron AIX G5+C MOCVD system to scale up GaN epi and device capacity for power electronics

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5 October 2017

eLASER orders further Aixtron AIX G5+C MOCVD system to scale up GaN epi and device capacity for power electronics

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that Elite Advanced Laser Corporation (eLASER) of Chung Ho Dist, New Taipei City, Taiwan, which provides electronics manufacturing services (EMS) for optoelectronic and radio frequency (RF) components, has placed a repeat order for an AIX G5+C metal-organic chemical vapor deposition (MOCVD) system to produce gallium nitride (GaN) epitaxial wafers and devices for power electronics applications.

The production tool will be installed during second-half 2017, complemening existing capacity. It integrates Penta-Injector technology (for best material uniformities across the entire wafer diameter) and is equipped with a cassette-to-cassette (C2C) wafer transfer module for full automation of GaN processes.

“We have been impressed by the speed at which eLASER has transferred their device manufacturing processes on our system technology. Therefore, we are convinced that the recent addition of our AIX G5+C platform - which has become the tool of record at leading GaN power electronics manufacturers - will support the company’s goal to gain further market share in the GaN power electronics ecosystem,” comments Aixtron’s president Dr Bernd Schulte. “While offering configurations of 8x150mm and 5x200mm, the tool meets the toughest requirements from the silicon industry in terms of uniformity and particles. Thereby, Aixtron’s G5+C system technology is breaking down the barriers to bring GaN into silicon production lines.”

Tags: Aixtron MOCVD GaN-on-Si Power electronics

Visit: www.elaser.com.tw

Visit: www.aixtron.com

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