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16 May 2017

Wolfspeed achieves first all-SiC 1.2kV power module harsh environment qualification

Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power devices — has launched what it claims is the first power module that passes the harsh environment qualification test for simultaneous high-humidity, high-temperature and high-voltage conditions.

The reliability benchmark enables system designers to use the device in outdoor applications such as transportation, wind, solar and other renewables where extreme environmental conditions have historically challenged safe device operation. Rated for 300A and 1.2kV blocking, the new all-SiC module was stressed in an 85% relative humidity, 85°C ambient while biased at 80% of rated voltage (960V). Success in harsh environment testing under bias provides further confidence in the overall ruggedness of SiC device technology for all applications, says Wolfspeed.

“SiC components enable the design of compact, lightweight, low-loss converters required for railway transport applications,” comments Michel Piton, semiconductor master expert at Alstom, a global supplier of systems, equipments and services for the railway market. “Achieving March 2017 the benchmark for temperature and humidity under high bias voltage is a key milestone for SiC devices in its adoption into our demanding market.”
Powered by new Wolfspeed MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the harsh environment test at the die level, the new module retains the low 4.2mΩ on-resistance and more than five times lower switching losses than similarly rated latest-generation insulated-gate bipolar transistor (IGBT) modules, claims Wolfspeed. Module construction utilizes high-thermal-conductivity aluminum nitride substrates and optimized assembly methods to meet industry thermal and power cycling requirements.

“The latest 1200V module demonstrates our commitment to enabling markets and applications by meeting the anticipated system requirements for 2020 and beyond,” says chief technology officer John Palmour.

The new module (part number WAS300M12BM2) can be driven using existing Wolfspeed gate drivers for 62mm modules. Wolfspeed is exhibiting the new module in booth 242 (hall 9) at the 2017 Power Conversion and Intelligent Motion (PCIM) Europe expo in Nuremberg, Germany (16-18 May).

See related items:

Wolfspeed expands third-generation MOSFET platform to 1200V

Cree acquires SiC power module firm APEI

Tags: Wolfspeed Cree SiC MOSFET SiC Schottky barrier diodes SiC power modules

Visit:  www.mesago.de/en/PCIM/main.htm

Visit:  www.wolfspeed.com/power/products

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