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9 May 2017

Exagan’s GaN-on-Si technology Revolutionizes Energy Usage

Gallium nitride (GaN) technology start-up Exagan of Grenoble, France says that its founder & CEO Frédéric Dupont will be available in booth #9-230 at the PCIM (Power Conversion Intelligent Motion) Europe 2017 trade show in Nuremberg, Germany (16-18 May) to discuss the development of a cost-efficient, low-risk, 200mm manufacturing process for fast-switching, high-efficiency GaN-on-silicon devices.

The results stem from the joint development partnership that Exagan entered into with X-FAB Silicon Foundries AG of Erfurt, Germany in May 2015. Together, the companies have produced Exagan’s 650V GaN-on-Si G-FET power transistors using a standard CMOS process flow.

At PCIM Europe, Exagan’s senior executive will discuss the firm’s latest technology advances and provide an update on the strategic partnership with X-FAB.

Exagan says that its GaN-on-Si technology offers a path to accelerating the power electronics industry’s transition to smaller, more efficient electrical converters, for emerging applications including plug-in hybrid and electric vehicles, solar energy, industrial electronics, and charging of mobile electronics.

See related items:

Exagan partners with HIREX to establish GaN-on-Si's reliability for power converters

Exagan showcasing GaN-on-Si technology and announcing strategic partnership at PCIM Europe

Aixtron ships AIX G5+ C MOCVD system to Exagan for production ramp of GaN-on-Si power-switching devices

Exagan raises €5.7m to produce GaN-on-Si power-switching devices on 200mm wafers

X-FAB and Exagan to co-develop high-volume production of high-speed GaN-on-Si power switching devices on 200mm wafers

Tags: GaN-on-Si GaN switching device on silicon

Visit:  www.exagan.com

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