13 March 2017
RFHIC launches GaN transistors & power amplifiers for ISM bands
RFHIC Corp of Anyang, South Korea, which designs and makes active RF & microwave high-power components and hybrid modules for telecoms, defense industries, consumer goods and customized solutions, has announced immediate availability and full design support capabilities of new gallium nitride (GaN) transistors and power amplifiers optimized for 915MHz, 2.45GHz and 5.8GHz industrial, scientific & medical (ISM) bands, with RF output powers ranging from 30W to 550W.
The new GaN transistors are optimized for continuous-wave applications up to 300W RF output power with power efficiency of more than 70%.
The new GaN power amplifiers achieve over 50dB of power gain and high drain efficiency of over 55-60% including isolators. They are said to be simpler to control and more reliable than the existing magnetron and provide better solutions for compact system designs than silicon-based LDMOS power amplifiers. Moreover, RFHIC’s own transistors are used in the power amplifiers, enabling more reliable and cost-competitive solutions, claims the firm.
The firm offers a choice of variation in the use of isolator, voltage-controlled oscillator (VCO) signal generation, forward and reverse power detection etc in order to satisfy diverse and precise requirements in the market, aiming to maximize the flexibility in customers’ development environments and conditions.
Furthermore, the development of two-stage compact power amplifiers with a size of 80mm x 40mm x 5mm and efficiencies of 66-70% is in progress (for availability in April). These products will increase the number of choices available for specific system designs.