Temescal

ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

10 January 2017

Wolfspeed launches 900V, 10mΩ SiC MOSFET for electric vehicle drive-trains

Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including MOSFETs, Schottky diodes, and modules — has launched a 900V, 10mΩ MOSFET rated for 196A of continuous drain current at a case temperature of 25°C. The device enables the reduction of electric vehicle (EV) drive-train inverter losses by 78% based on EPA combined city/highway mileage standards. This efficiency improvement offers designers new options in terms of range, battery usage and vehicle design, says the firm.

Recently — in a collaboration with the US Department of Energy (DoE) ― Wolfspeed supplied Ford Motor Company with a full-SiC, 400A power module designed around the 900V, 10mΩ chip. Designed and produced by Wolfspeed, the module contains four MOSFETs connected in parallel to achieve an on-resistance (Rds(on)) of 2.5mΩ. Wolfspeed has since demonstrated the capability for using these chips to create an 800A, 1.25mΩ module.

"With the commercial release of the 900V 10mΩ device, electric vehicles can now reap the benefits of SiC in all aspects of their power conversion," says Wolfspeed's chief technology officer John Palmour. "With the continued expansion of our Gen3 MOSFET portfolio in new package options, our devices can now support significant efficiency improvements in on-board chargers, off-board chargers, and now EV drive trains," he adds.

Commercially qualified and rated for a maximum operating temperature of 175˚C, the new chip offers high reliability in harsh environments, such as those found in vehicle drive-trains, says Wolfspeed.

The new 900V, 10mΩ MOSFET is available in bare die form (listed as part number CPM3-0900-0010A) from SemiDice. Wolfspeed expects to release the associated discrete device in a 4L-TO247 package (C3M0010090K) in the coming weeks. The package has a Kelvin-source connection that allows engineers to create designs that maximize the benefits of SiC's superior speed and efficiency, adds Wolfspeed.

Tags: Wolfspeed Cree SiC MOSFET

Visit: www.wolfspeed.com/cpm3-0900-0010a

Share/Save/Bookmark
See Latest IssueRSS Feed

EVG