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12 January 2017

Toshiba begins shipping second-generation 650V SiC Schottky barrier diodes with surge forward current improved by 70%

Toshiba Corp's Storage & Electronic Devices Solutions Company has begun shipping a new line-up of eight second-generation 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) that improve on the surge forward current (IFSM) offered by the firm's existing products by about 70%.

Fabricated with Toshiba's second-generation SiC process, the new SiC Schottky barrier diodes deliver about 70% better surge forward current than its first-generation products, while reducing the switching loss index RON  x Qc (anode-cathode on-resistance times total capacitive charge) by about 30%, making them suitable for use in efficient power factor correction (PFC) schemes.

Available in four current ratings of 4A, 6A, 8A and 10A - either in a non-isolated TO-220-2L package or an isolated TO-220F-2L package - the new products can contribute to improving the efficiency of power supplies in devices including 4K large screen LCD TVs, projectors and multi-function copiers, and in industrial devices such as telecom base-stations and PC servers, says Toshiba.

See related items:

Toshiba's second-gen SiC Schottkys deliver 50% greater current density and improved surge current ratings

Tags: Toshiba SiC Schottky barrier diodes

Visit: www.toshiba.co.jp

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