4 December 2017
Navitas demonstrating GaN power IC at CES
Navitas Semiconductor Inc of El Segundo, CA, USA says that at the 2018 Consumer Electronics Show (CES) in Las Vegas (9-12 January) it will be demonstrating how gallium nitride (GaN) power ICs are creating a new class of mobile and consumer power solutions. The firm will give live demonstrations showcasing five different applications enabled by GaN power IC technology which are up to 5x faster, smaller or more energy efficient compared with existing solutions.
Founded in 2013, Navitas introduced what it claimed to be the first commercial GaN power ICs. The firm says that its proprietary ‘AllGaN’ 650V platform monolithically integrates GaN power field-effect transistors (FETs) with logic and analog circuits, enabling smaller, higher-energy-efficiency and lower-cost power for mobile, consumer, enterprise and new energy markets.
“GaN power adoption has been accelerating throughout the industry and CES provides the perfect opportunity for innovators to see why,” says Stephen Oliver, VP of sales & marketing. “Our high-performance, easy-to-use GaN power ICs are generating significant interest from innovators in next-generation applications that include ultra-thin TVs, fast mobile chargers, drones, AR/VR devices, gaming systems and more.”
In September, Navitas introduced what it claimed to be the smallest 65W USB-PD laptop adapter reference design, supporting the dramatic size and weight reductions demanded by consumers. The NVE028A utilizes Navitas’ high-frequency, high-efficiency AllGaN GaN power ICs to deliver 65W in a package up to five times smaller and lighter than traditional silicon-based designs. Since introducing the AllGaN platform at APEC’16, Navitas has announced single- and half-bridge GaN power ICs, plus the world’s smallest 150W adapter.