, EPC launches 40V, 5mΩ GaN power transistor eight times smaller than equivalent MOSFETs

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19 December 2017

EPC launches 40V, 5mΩ GaN power transistor eight times smaller than equivalent MOSFETs

© Semiconductor Today Magazine / Juno Publishing

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has launched the EPC2049 power transistor – which has a voltage rating of 40V and maximum RDS(on) of 5mΩ with a 175A pulsed output current – for applications including point of load (PoL) converters, light detection and ranging (LiDAR), envelope tracking power supplies, class-D audio, and low-inductance motor drives.

The chip-scale packaging of the EPC2049 handles thermal conditions far better than the plastic-packaged MOSFETs since the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package, says EPC. The new device measures just 2.5mm x 1.5mm (3.75mm2) – about eight times smaller than equivalently rated silicon MOSFETs – so designers no longer have to choose between size and performance, notes the firm.

“The EPC2049 demonstrates how EPC and gallium nitride transistor technology is increasing the performance and reducing the cost of eGaN devices,” says co-founder & CEO Alex Lidow. “The EPC2049 is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen.”

The EPC2049 eGaN FET is priced at $2.19 each in 1000-unit quantities, and is available for immediate delivery from distributor Digi-Key.

See related items:

EPC launches 200V, 25mΩ GaN power transistor 12 times smaller than equivalent MOSFETs

Tags: EPC E-mode GaN FETs

Visit: http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page

Visit: www.epc-co.com

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