, EPC introduces 60W Class-E amplifier development board with 200V eGaN FET, enabling high efficiency up to 15MHz for wireless power and LiDAR

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22 August 2017

EPC introduces 60W Class-E amplifier development board with 200V eGaN FET, enabling high efficiency up to 15MHz for wireless power and LiDAR

Providing an easy-to-use way for power systems designers to evaluate the performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has announced the EPC9083, a high-efficiency, flexible, GaN-based differential mode development board that can operate up to 15MHz, including 6.78MHz (popular for wireless power applications).

The development board is designed for class-E applications, such as wireless power, but can be used for any application where a low-side switch is utilized. Examples include (but are not limited to) push-pull converters, current-mode class-D amplifiers, common-source bi-directional switches, and high-voltage narrow pulse width applications such as LiDAR.

The EPC9083 features the EPC2046, EPC’s latest-generation 200V, 25mΩ eGaN FET, which allows even less switching loss than the previous generation of eGaN FETs, in an even smaller size, while keeping the same drain-source on-resistance. The amplifiers are set to operate in differential mode and can be re-configured to operate in single-ended mode and include the gate driver and logic supply regulator.

The EPC9083 is priced at $158.13 each and is available for immediate delivery from Digi-Key. A Quick Start Guide (containing set-up procedures, schematic, and bill of material for the boards) is provided on-line.

Tags: EPC E-mode GaN FETs GaN-on-Si

Visit: http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Visit: http://epc-co.com/epc/Products/DemoBoards.aspx

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