3 April 2017
Littelfuse and Monolith presenting 1200V SiC Schottky diodes and 1200V SiC MOSFET technology platform at PCIM Europe
At the PCIM (Power Conversion and Intelligent Motion) Europe 2017 conference in Nuremberg, Germany (16-18 May), Littelfuse Inc, which provides circuit protection technologies (including fuses, semiconductors, polymers, ceramics, relays and sensors), will present the new GEN2 Series of 1200V silicon carbide (SiC) Schottky diodes, the first commercially available SiC devices developed through its partnership with SiC diode and MOSFET power device start-up Monolith Semiconductor Inc of Round Rock, TX, USA (in which it is the majority owner).
Visitors to booth 335 (Hall 7) will also get a first look at the partnership’s next technology platform for the power semiconductor market, a line of 1200V SiC MOSFETs.
At PCIM Europe, Monolith will also participate in two poster presentations and an industry forum:
16 May - Poster Dialogue Session (3:30-5:30pm, Foyer Ground Floor Entrance NCC Mitte):
- PP017: ‘System Level Comparison of SiC IGBTs and SiC MOSFETs’;
- PP019: ‘Characterization and Optimization of SiC Freewheeling Diode for Switching Losses Minimization Over Wide Temperature Range’.
18 May - Industry Forum (Hall 6, Booth 6143):
- ‘SiC MOSFETs – How Can We Match the Success of SiC Diodes?’.
In December 2015, Littelfuse and Monolith formed a strategic partnership to develop power semiconductors for industrial and automotive markets. Early this March, Littelfuse made an incremental $15m investment in Monolith, increasing its stake to majority ownership.
The two firms say that their joint demonstrations at both PCIM Europe and the Applied Power Electronics Conference & Exposition (APEC 2017) in Tampa, Florida (26–30 March) demonstrate the level of resources that both partners are willing to commit to develop applications and support customers in the use of the designs.