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4 April 2017

IXYS launches dual 1200V SiC Schottky diodes in SOT-227 packages for higher-power applications

IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands (which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications) has announced availability of the DCG85X1200NA and DCG100X1200NA, both dual 1200V-rated SiC Schottky diodes in fully isolated MiniBLOC (SOT-227) packages.

Both offer two SiC Schottky diodes with an average forward current of 43A and 49A, respectively, at 80°C case temperature. Both are rated at 1200V blocking voltage in MiniBLOC SOT-227 package featuring 3kV isolation to heat sink and low thermal impedance based on IXYS’ proprietary technology. Both products offer higher power density, lower assembly cost, and smaller size.

“With this addition to our fast diode portfolio, IXYS enables higher power in switching and control for solar inverters, uninterruptible power supplies (UPS) and rapid charger solutions,” says Dr Elmar Wisotzki, director of technology for IXYS Germany. “The devices use our matching assembly technology to harvest the full advantage of the IXYS SiC power diodes,” he adds. “IXYS also offers the best driver ICs, such as the IXDD609SI, for high-power SiC MOSFETs. Thus, we offer the total solution to our customers to improve efficiency at best performance over cost ratio,” he claims.

Both diodes are electrically isolated from each other inside the package, allowing it to be free to connect to a common source or phase leg configuration. Additionally, the positive temperature coefficient of the forward voltage supports paralleling options for higher-power applications.

See related items:

IXYS launches 1200V SiC power MOSFETs in SOT227 MiniBLOC packages for higher-power applications

Tags: IXYS SiC power MOSFET

Visit: www.ixys.com

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