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IQE

7 September 2016

VisIC launches low-RDS(ON) 650V GaN switch product line in bottom-side-cooled package for switching up to 12A

VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has launched a new product with an on-resistance (RDS(ON)) rating of just 0.080Ω and a reduced external components requirement using a simplified driving scheme, offered in a smaller package with bottom-side cooling. 

The new 650V GaN power switch is a member of the firm's ALL-Switch (Advanced Low Loss Switch) family, designed for bridge converters in motor drives, power supplies, chargers, UPS (uninterruptible power systems), Inverters and other circuits requiring high efficiency and currents up to 12A.

VisIC claims that its designs operate with lower gate charge and capacitance than competing products while providing the benefits of low RDS(ON). Offered in low-inductance packaging, the ALL-Switch family is able to deliver high efficiency, adds the firm. For comparison, ALL-Switch's switching losses are 3-5 times lower than comparable silicon carbide (SiC) MOSFET transistors operating at the same frequency, it is reckoned.

VisIC says that the V80N65B meets the demand of customers for a bottom-side-cooled package in their designs after they have experienced ALL-Switch's low switching losses.

The V80N65B bottom-side-cooled power switch supplements VisIC's existing ALL Switch top-side-cooled product line of 650V GaN devices (the V22N65A, V22S65A and V18G65A).

See related items:

VisIC launches new generation of low-Rdson ALL-Switch 650V GaN devices usable with standard drivers

VisIC launches 650V half-bridge evaluation board

VisIC makes available evaluation board and samples for 650V GaN power switch

VisIC launches 650V normally-off GaN power switches

Tags: GaN-on-Si power transistor

Visit: www.visic-tech.com

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