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17 October 2016

Rohm's third-generation SiC Schottky barrier diodes reduce forward voltage and reverse current leakage while increasing surge resistance

Rohm of Kyoto, Japan has made available its 3rd-generation SiC Schottky barrier diodes (SBDs), optimized for power supply PFC (power factor correction) circuits in servers and high-performance PCs.

In recent years, there has been a demand for power components that provide higher efficiencies in order to improve power conversion efficiency and energy savings in the power electronics market (which includes industrial power supplies, solar power systems, electric vehicles, and home appliances). Compared with conventional silicon products, SiC devices feature superior material characteristics, making them preferable for power applications. In particular, in equipment such as servers (where maximum power supply efficiency is demanded), the high-speed recovery characteristics of SiC SBDs have proven effective in increasing device efficiency when used in PFC circuits. Surge current resistance is also an important consideration in high-power applications.

Rohm says that its 1st- and 2nd-generation SiC SBDs continue to be well received in the industry. However, to expand applicability, the new SCS3 3rd-generation SiC SBD series adopts optimized processes and a new JBS (junction barrier Schottky) device structure that improves on the industry-low forward voltage (VF) characteristics of Rohm's 2nd-generation SiC SBDs (from VF = 1.55V to 1.44V @ 150°C, both with VF=1.35V@25°C,).

Generally, as forward voltage is reduced, reverse current leakage increases. However, Rohm's new JBS structure minimizes leakage current along with forward voltage characteristics, resulting in 20x less leakage compared with 2nd-generation SiC SBDs at the same rated voltage of 650V (at Tj=150℃).

In addition, together with what are claimed to be excellent leakage characteristics, there is also a significant increase in surge-current resistance (from 40A to 82A). All this contributes to greater application efficiency, says the firm, enabling support for power supply PFC circuits.

Rohm's 3rd-generation SiC SBDs are currently available in the TO-220ACP package. Pricing starts from $2.28 each (in 1000-unit quantities). A surface-mount type (TO-263AB) is scheduled for future release based on market demand.

See related items:

Rohm showcasing new third-generation 650V SiC Schottkys and 1200V/180A full-SiC modules at PCIM

Tags: Rohm SiC Schottky barrier diodes

Visit: www.rohm.com

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