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3 October 2016

Qorvo launches new family of 0.15μm GaN-on-SiC die transistors

Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of gallium nitride (GaN) die transistors with the higher-frequency performance and low noise essential for advanced applications in communications, radar and defense RF systems.

The family includes six new GaN transistors manufactured using Qorvo's QGaN15 0.15μm GaN on silicon carbide (SiC) process and its associated models. The QGaN15 process enables these transistors to offer high-frequency operation of up to 25GHz, supporting die-level designs that deliver higher-frequency, cost-effective discrete technology up through K-band applications.

"The combination of higher-performance GaN products, complementary models and dedicated applications engineering support sets Qorvo apart," claims Roger Hall, general manager of High Performance Solutions at Qorvo.

Linear, non-linear and noise models, which enable rapid, accurate performance testing and speed production readiness, are available from partner Modelithics Inc of Tampa, FL, USA, which provides RF and microwave active and passive simulation models for electronic design automation (EDA). The models offer features such as scaling of operating voltage, ambient temperature and self-heating effects, as well as intrinsic voltage/current node access for waveform optimization.

Tags: Qorvo GaN RF GaN-on-SiC Modelithics

Visit: www.modelithics.com/mvpQorvo.asp

Visit: www.qorvo.com

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