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14 October 2016

Peregrine's PE42723 high-linearity RF switch wins 2016 ECN IMPACT Award

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – says that its UltraCMOS PE42723 high-linearity RF switch has won an ECN IMPACT Award in the market disruptor category. In addition, the PE42723 switch was named a finalist in the microwaves & RF category, and the PE29100 gallium nitride (GaN) field-effect transistor (FET) driver was recognized as a finalist in the power sources & conditioning devices category.

The ECN IMPACT Awards recognize the products and services that have the greatest impact on the electronic components industry. The market disruptor category highlights a product that forever changed the electronic engineering industry or a particular vertical within the industry.

"Products like the PE42723 enable the cable industry to deliver equipment that is fully compliant with today's stringent communication standards," says director of marketing Kinana Hussain.

The PE42723 is an RF switch that is claimed to have the highest linearity specifications on the market. An upgraded version of the PE42722, the new RF switch offers enhanced performance in a smaller package. Like its predecessor, the PE42723 exceeds the linearity requirements of the DOCSIS 3.1 cable industry standard and enables a dual upstream/downstream band architecture in next-generation cable customer premises equipment (CPE) devices.

The PE29100 is claimed to be the world's fastest GaN FET driver. Based on Peregrine's UltraCMOS technology, the new GaN driver is targeted at enabling design engineers to extract the full performance and speed advantages from GaN transistors. Designed to drive the gates of a high-side and a low-side GaN FET in a switching configuration, the PE29100 delivers what are claimed to be the industry's fastest switching speeds, shortest propagation delays and lowest rise and fall times to AC-DC converters, DC-DC converters, class D audio amplifiers, and wireless-charging applications.

See related items:

Peregrine unveils fastest GaN FET driver

Peregrine's dual upstream/downstream-band RF switches designed into multiple DOCSIS 3.1-certified cable modems

Peregrine's new RF switch exceeds linearity requirements for dual-band DOCSIS 3.1

Peregrine launches high-linearity SPDT RF switch enabling dual-band architecture for DOCSIS 3.1 cable CPE devices

Tags: Peregrine SOI RF switches

Visit: www.psemi.com

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