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10 May 2016

Wolfspeed launches all-SiC half-bridge power module & gate driver combination

In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including MOSFETs, Schottky diodes, and modules — has introduced the first fully qualified commercial power module from its operation in Fayetteville, AR.

The 62mm module represents a new generation of all-SiC power modules that enable unprecedented efficiency and power density for high-current power electronics, such as converters/inverters, motor drives, industrial electronics, and high-performance electric vehicle (EV) systems. The new module allows systems designers to realize lighter-weight systems that are up to 67% smaller by achieving efficiencies of over 98% and improvements in power density of up to 10 times compared with systems built with silicon-based technologies, it is reckoned.

"Wolfspeed's launch of this fully qualified, next-generation SiC power module represents the culmination of an engineering development program that began with the company's early SiC MOSFET module designs," says chief technology officer John Palmour. "Our 2015 acquisition of Arkansas Power Electronics International (APEI) [a provider of SiC power modules and power electronics applications] enabled our team to deliver this advanced power module design on an aggressive timeline by combining leading-edge SiC device technology with the industry's most advanced wide-bandgap packaging innovation," he adds. "The resulting module is the first of many products that promise an accelerated disruption of the power electronics market."

Compared to conventional silicon insulated-gate bipolar transistor (IGBT) power modules, or even previous-generations of SiC MOSFET modules, the new module can offer much higher power density for applications in which volume and weight are critical limitations, says Wolfspeed. Operating at a higher switching frequency without any compromise in system efficiency means a reduction in the number and size of magnetic and passive components required for the balance of the system. The thermal characteristics of SiC devices, along with the packaging design and materials, enable the module to operate at 175°C, which is a key advantage for many industrial, aerospace and automotive applications.

The newly commercialized Wolfspeed module design achieves a 66% reduction in module inductance to 5.5nH, compared with competitive power products at 15nH, it is reckoned, enabling faster switching speeds, higher-frequency operation, and ultra-low losses.

Available as part number CAS325M12HM2, the power module is configured in a half-bridge topology consisting of seven 1.2kV 25mΩ C2M SiC MOSFETs and six 1.2kV 50A Z-Rec Schottky diodes. The companion gate driver (CGD15HB62LP) is specifically designed for integration with the module to fit within the 62mm mounting footprint. An engineering evaluation kit that includes both the module and the gate driver is also available so design engineers can quickly and easily test the performance of the new device in their systems.

See related items:

Cree acquires SiC power module firm APEI

Tags: Cree SiC MOSFET SiC power modules

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.wolfspeed.com/power/products

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