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25 May 2016

Microsemi showcasing 15 new RF, microwave and millimeter-wave devices

Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for the communications, security, aerospace and industrial markets) is featuring 15 new products from its radio frequency (RF), millimeter-wave integrated circuit (IC), monolithic microwave integrated circuit (MMIC), ultra-low-power sub-GHz transceiver and high-performance WLAN monolithic radio frequency integrated circuit (RFIC) portfolio at the IEEE MTT-S International Microwave Symposium (IMS2016) in San Francisco (22-27 May). With a broad product offering spanning the DC to 140GHz frequency range, the new devices build on Microsemi's history in RF, microwave and millimeter-wave solutions and meet the growing demand in the defense, communications, instrumentation, industrial and aerospace industries.

"Microsemi offers RF, microwave and millimetre-wave antenna-to-bits solutions with a progressive emphasis on high-performance semiconductor and packaging technologies," says Siobhan Dolan Clancy, VP & general manager of Microsemi's Discrete Products Group. "This has allowed us to work continuously with industry leaders in our target markets to solve complex engineering problems at the discrete, RFIC and MMIC levels."

In booth #2119 at the IMS exhibition, Microsemi is showcasing the following new devices as well as other products:

GaN HEMT RF power transistors and drivers covering L-band to 750W  
Microsemi's expanding family of RF power transistors based on gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) substrates includes six new L-band RF power transistors and drivers rated between 120W and 750W. The new 1214GN-750V, 1214GN-120E/EL/EP, 1011GN-125E/EL/EP, 1011GN-250E/EL/EP, 1416GN-600V and 1416GN-120E/EL/EP RF power transistors and drivers span a wide range of radar, avionics and communications applications with compact packaging options.

Monolithic SPST and SPDT PIN switch elements delivering up to 100W through 6GHz
The MPS2R10-606, MPS4103-607 and MPS2R11-608 are single-chip silicon monolithic series-shunt elements designed with minimal parasitic inductance to provide optimum insertion loss of less than 0.3dB, 55dB of isolation, and 500ns switching times over the entire 100MHz to 6GHz frequency range. The products are suitable replacements for the conventional shunt-mounted chip and series-mounted beam lead PIN diode normally used in the manufacture of broadband microwave switches. Capable of switching up to 100W of continuous wave (CW) power, the devices are suitable for transmit/receive (T/R) and high-power switching in military and commercial radio, radar and cellular infrastructure applications. The products meet RoHS requirements per EU directive 2002/95/EC.

New series of low-cost MELF PIN diodes featuring 2GHz switching, 500V breakdown voltage 
UMX502-UMX812 is a new series of low-cost, metal electrode leadless face-bonded (MELF) high-power, ceramic PIN diodes, comprising hermetically sealed, high-reliability surface-mount packaged devices with full face-bonded chips and very low-inductance construction. The MELF PIN diodes are suitable for a wide range of general-purpose and broadband switching, attenuating and phase-shifting applications from high frequency through 2GHz, as well as for use in MRI coil switching and other low-magnetic applications. The RoHS-compliant products meet the requirements of EU directive 2002/95/EC and are fully compatible with pick-and-place and solder reflow manufacturing techniques. UMX502-UMX812 series devices are ESD HBM Class 2 products and exhibit breakdown voltage ratings up to 500V.

MMICs
Microsemi's MMIC portfolio spans the DC to 65GHz frequency range and targets a broad range of applications including electronic warfare (EW), radar, test & measurement instrumentation, and microwave communications. The portfolio is based on high-performance process technologies and comprises high-power and low-noise broadband amplifiers, amplifier modules, pre-scalers, attenuators and switches. Microsemi offers 20 distributed amplifier products. The firm's pre-scalers combine higher-frequency operation, the flexibility to divide by a large number of ratios, and what is claimed to be excellent residual phase noise.

Lowest sleep-state current sub-GHz transceiver
Operating in the 779-965MHz unlicensed industrial, scientific & medical (ISM) frequency bands, Microsemi's ZL70550 consumes only 2.8mA of current while transmitting at -10dBm output power and a similar 2.5mA during reception. It offers a low sleep-state current of 10nA, making it suitable for low-duty cycle applications. Microsemi addresses the high cost of battery replacement issues common with medical and industrial users by leveraging the intellectual property from its ultra-low-power implantable pacemakers and hearing aids to provide the lowest-power wireless link in an extremely small form factor that is easy to deploy.

Wi-Fi high-linearity power amplifiers and front-end modules
Among an expanding portfolio of customer premise equipment (CPE) products for Wi-Fi 802.11 a/b/g/n/ac applications, Microsemi's new 5GHz and 2GHz single-band front-end modules (FEMs) are designed for medium-power applications and optimized for long-packet EVM performance suitable for wireless client set-top box, gateway, and 4K ultra-high-definition (HD) platforms. Where cost and size are critical, a dual-band (5GHz/2GHz) FEM will be offered in a compact 4mm x 3mm 28-pin QFN package, using a 3.3V supply, suitable for smart television and over-the-top (OTT) content platforms.  Microsemi offers a family of high-linearity power amplifiers, featuring the latest in 2GHz amplifiers, delivering +23dBm of linear power with what is claimed to be market-leading current consumption, critical for thermal management for newer 4 x 4 and 8 x 8 multi-user multiple-input multiple-output (MIMO) platforms.

All the Microsemi products displayed at IMS2016 are available now.

Tags: Microsemi

Visit: www.microsemi.com

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